Graphite-semiconductor applications

The third-generation semiconductor materials are mainly made of silicon carbide (SiC) and gallium nitride (GaN). With the characteristics of high power, high temperature resistance, high breakdown voltage, high current density and high frequency, it can better respond to the development trends of electric vehicles, green energy, 5G base stations, radar and fast charging. Among them, SiC-on-SiC, GaN- On-SiC and GaN-on-Si are the most developing.